Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

Abstract

Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement with the experiment. To better explain the experimentally observed dislocation distribution, the Alexander–Haasen model was extended with a critical stress threshold below which no dislocation multiplication occurs. The results are compared with the experiment, and some remaining shortcomings in the model are discussed.

Keywords

• computer simulation
• line defects (dislocations)
• stresses
• semiconducting silicon
• floating zone technique