Finite element simulation and analysis of nanometal-semiconductor contacts

Abstract

Nanometal-semiconductor contacts in the sub-20-nm range have shown some deviations in electrical characteristics compared to conventional diodes. We have used a finite element simulation software to build and analyze a proposed geometrical model. We used two different theoretical approaches to study the enhancements of the electric field at the interface, and then the total current across nano-Schottky junction. The results revealed a significant tunneling current at the reverse bias for low n-doped semiconductor substrates and low current at the forward bias. However, in the case of high n-doped semiconductor substrates, the thermionic current is significant at forward biases and the current is low at the reverse bias. We have used our finite element simulation models based on both approaches to fit the existing experimental data of nano-Schottky contacts.

Keywords

• nanodevices
• nanometal particles
• nano-schottky junctions
• thermionic current
• tunneling current