AIP Advances
(Feb 2018)
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Perry C. Grant,
Joe Margetis,
Yiyin Zhou,
Wei Dou,
Grey Abernathy,
Andrian Kuchuk,
Wei Du,
Baohua Li,
John Tolle,
Jifeng Liu,
Greg Sun,
Richard A. Soref,
Mansour Mortazavi,
Shui-Qing Yu
Affiliations
Perry C. Grant
Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
Joe Margetis
ASM, 3440 East University Drive, Phoenix, AZ 85034, USA
Yiyin Zhou
Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
Wei Dou
Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Grey Abernathy
Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Andrian Kuchuk
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Wei Du
Department of Electrical Engineering, Wilkes University, Wilkes-Barre, PA 18766, USA
Baohua Li
Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
John Tolle
ASM, 3440 East University Drive, Phoenix, AZ 85034, USA
Jifeng Liu
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA
Greg Sun
Department of Engineering, University of Massachusetts Boston, Boston, MA 02125, USA
Richard A. Soref
Department of Engineering, University of Massachusetts Boston, Boston, MA 02125, USA
Mansour Mortazavi
Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
Shui-Qing Yu
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
DOI
https://doi.org/10.1063/1.5020035
Journal volume & issue
Vol. 8,
no. 2
Abstract
Read online
This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.
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