Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

Abstract

Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures.

Keywords

• Semiconductor–semiconductor–metal heterostructure
• Semiconductor junctions
• Mott–Schottky junctions
• Built-in electric field
• Electromagnetic wave absorption