Fabrication and Characterization of the Li-Doped ZnO Thin Films Piezoelectric Energy Harvester with Multi-Resonant Frequencies

Abstract

A novel piezoelectric energy harvester with multi-resonant frequencies based on Li-doped ZnO (LZO) thin films is proposed in this paper, consisting of an elastic element with three (or more) different length cantilever beam arrays and a piezoelectric structure (Al/Li-doped ZnO/Pt/Ti). The LZO thin films of piezoelectric structure were prepared on Pt/Ti/SiO2/Si by using a radio frequency (RF) magnetron sputtering method under certain process conditions. When the LZO thin films were deposited with an LZO target concentration of 5 wt%, the piezoelectric coefficient d33 was 9.86 pm/V. Based on this, the energy harvester chips were fabricated on a <100> silicon substrate using micro-electromechanical systems (MEMS) technology, and its performance can be measured by fixing it to a printed circuit board (PCB) test substrate. The experimental results show that, when exerting an external vibration acceleration of 2.2 g and a vibration frequency of 999 Hz, the energy harvester can achieve a big load voltage of 1.02 V at a load resistance of 600 kΩ, and a high load power of 2.3 µW at a load resistance of 200 kΩ.

Keywords

• piezoelectric energy harvester
• Li-doped ZnO thin films
• MEMS technology
• multi-resonant frequencies
• load power