APL Materials (Aug 2023)
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
- José P. B. Silva,
- Ruben Alcala,
- Uygar E. Avci,
- Nick Barrett,
- Laura Bégon-Lours,
- Mattias Borg,
- Seungyong Byun,
- Sou-Chi Chang,
- Sang-Wook Cheong,
- Duk-Hyun Choe,
- Jean Coignus,
- Veeresh Deshpande,
- Athanasios Dimoulas,
- Catherine Dubourdieu,
- Ignasi Fina,
- Hiroshi Funakubo,
- Laurent Grenouillet,
- Alexei Gruverman,
- Jinseong Heo,
- Michael Hoffmann,
- H. Alex Hsain,
- Fei-Ting Huang,
- Cheol Seong Hwang,
- Jorge Íñiguez,
- Jacob L. Jones,
- Ilya V. Karpov,
- Alfred Kersch,
- Taegyu Kwon,
- Suzanne Lancaster,
- Maximilian Lederer,
- Younghwan Lee,
- Patrick D. Lomenzo,
- Lane W. Martin,
- Simon Martin,
- Shinji Migita,
- Thomas Mikolajick,
- Beatriz Noheda,
- Min Hyuk Park,
- Karin M. Rabe,
- Sayeef Salahuddin,
- Florencio Sánchez,
- Konrad Seidel,
- Takao Shimizu,
- Takahisa Shiraishi,
- Stefan Slesazeck,
- Akira Toriumi,
- Hiroshi Uchida,
- Bertrand Vilquin,
- Xianghan Xu,
- Kun Hee Ye,
- Uwe Schroeder
Affiliations
- José P. B. Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), Campus de Gualtar, University of Minho, 4710-057 Braga, Portugal
- Ruben Alcala
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- Uygar E. Avci
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
- Nick Barrett
- SPEC, CEA, CNRS, CEA Saclay, Université Paris-Saclay, 91191 Gif-sur-Yvette, France
- Laura Bégon-Lours
- IBM Research Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Mattias Borg
- Electrical and Information Technology, Lund University, Box 118, Lund 22 100, Sweden
- Seungyong Byun
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Sou-Chi Chang
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
- Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Piscataway, New Jersey 08854, USA
- Duk-Hyun Choe
- Device Research Center, Samsung Advanced Institute of Technology (SAIT), Suwon 16678, Republic of Korea
- Jean Coignus
- CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
- Veeresh Deshpande
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, Berlin 14109, Germany
- Athanasios Dimoulas
- National Center for Scientific Research DEMOKRITOS, 15341 Athens, Greece
- Catherine Dubourdieu
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, Berlin 14109, Germany
- Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Barcelona 08193, Spain
- Hiroshi Funakubo
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 226-8502 Yokohama, Japan
- Laurent Grenouillet
- CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
- Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
- Jinseong Heo
- Device Research Center, Samsung Advanced Institute of Technology (SAIT), Suwon 16678, Republic of Korea
- Michael Hoffmann
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
- H. Alex Hsain
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
- Fei-Ting Huang
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Piscataway, New Jersey 08854, USA
- Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Jorge Íñiguez
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux L-4422, Luxembourg
- Jacob L. Jones
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
- Ilya V. Karpov
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
- Alfred Kersch
- Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences, Lothstr. 34, D-80335 Munich, Germany
- Taegyu Kwon
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Suzanne Lancaster
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- Maximilian Lederer
- Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
- Younghwan Lee
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
- Patrick D. Lomenzo
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- Lane W. Martin
- Department of Materials Science and Engineering, Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720, USA
- Simon Martin
- CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
- Shinji Migita
- National Institute of Advanced Industrial Science and Technology, Kumamoto, Japan
- Thomas Mikolajick
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- Beatriz Noheda
- CogniGron Center, University of Groningen, Groningen 9747 AG, The Netherlands
- Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Karin M. Rabe
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Sayeef Salahuddin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Barcelona 08193, Spain
- Konrad Seidel
- Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany
- Takao Shimizu
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- Takahisa Shiraishi
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
- Stefan Slesazeck
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- Akira Toriumi
- The University of Tokyo, Tokyo, Japan
- Hiroshi Uchida
- Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
- Bertrand Vilquin
- Ecole Centrale de Lyon, INSA Lyon, UCBL, CPE Lyon, CNRS, INL UMR5270, Université de Lyon, 69130 Ecully, France
- Xianghan Xu
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
- Kun Hee Ye
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Uwe Schroeder
- NaMLab gGmbH, Noethnitzer Str. 64a, 01187 Dresden, Germany
- DOI
- https://doi.org/10.1063/5.0148068
- Journal volume & issue
-
Vol. 11,
no. 8
pp. 089201 – 089201-70
Abstract
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.
