Improving the Photocurrent in Quantum-Dot-Sensitized Solar Cells by Employing Alloy PbxCd1−xS Quantum Dots as Photosensitizers
Chunze Yuan,
Lin Li,
Jing Huang,
Zhijun Ning,
Licheng Sun,
Hans Ågren
Affiliations
Chunze Yuan
Department of Theoretical Chemistry and Biology, School of Biotechnology, Royal Institute of Technology, 10691 Stockholm, Sweden
Lin Li
Center of Molecular Devices, Department of Chemistry, School of Chemical Science and Engineering, Royal Institute of Technology, 10044 Stockholm, Sweden
Jing Huang
Department of Theoretical Chemistry and Biology, School of Biotechnology, Royal Institute of Technology, 10691 Stockholm, Sweden
Zhijun Ning
Department of Theoretical Chemistry and Biology, School of Biotechnology, Royal Institute of Technology, 10691 Stockholm, Sweden
Licheng Sun
Center of Molecular Devices, Department of Chemistry, School of Chemical Science and Engineering, Royal Institute of Technology, 10044 Stockholm, Sweden
Hans Ågren
Department of Theoretical Chemistry and Biology, School of Biotechnology, Royal Institute of Technology, 10691 Stockholm, Sweden
Ternary alloy PbxCd1−xS quantum dots (QDs) were explored as photosensitizers for quantum-dot-sensitized solar cells (QDSCs). Alloy PbxCd1−xS QDs (Pb0.54Cd0.46S, Pb0.31Cd0.69S, and Pb0.24Cd0.76S) were found to substantially improve the photocurrent of the solar cells compared to the single CdS or PbS QDs. Moreover, it was found that the photocurrent increases and the photovoltage decreases when the ratio of Pb in PbxCd1−xS is increased. Without surface protecting layer deposition, the highest short-circuit current density reaches 20 mA/cm2 under simulated AM 1.5 illumination (100 mW/cm2). After an additional CdS coating layer was deposited onto the PbxCd1−xS electrode, the photovoltaic performance further improved, with a photocurrent of 22.6 mA/cm2 and an efficiency of 3.2%.
