Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Jiaye Zhang; Joe Willis; Zhenni Yang; Xu Lian; Wei Chen; Lai-Sen Wang; Xiangyu Xu; Tien-Lin Lee; Lang Chen; David O. Scanlon; Kelvin H.L. Zhang

Cell Reports Physical Science (Mar 2022)

Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Jiaye Zhang,
Joe Willis,
Zhenni Yang,
Xu Lian,
Wei Chen,
Lai-Sen Wang,
Xiangyu Xu,
Tien-Lin Lee,
Lang Chen,
David O. Scanlon,
Kelvin H.L. Zhang

Affiliations

Jiaye Zhang: State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China; Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
Joe Willis: Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK; Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, UK; Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, UK
Zhenni Yang: State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China
Xu Lian: Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Wei Chen: Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Lai-Sen Wang: Fujian Key Laboratory of Materials Genome, College of Materials, Xiamen University, Xiamen 361005, P.R. China
Xiangyu Xu: State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China
Tien-Lin Lee: Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, UK
Lang Chen: Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China; Corresponding author
David O. Scanlon: Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK; Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, UK; Corresponding author
Kelvin H.L. Zhang: State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China; Corresponding author

Journal volume & issue: Vol. 3, no. 3
p. 100801

Abstract

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Summary: Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

Published in Cell Reports Physical Science

ISSN: 2666-3864 (Online)
Publisher: Elsevier
Country of publisher: United States
LCC subjects: Science: Physics
Website: https://www.cell.com/cell-reports-physical-science

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