Nature Communications (Nov 2017)

Optical charge state control of spin defects in 4H-SiC

  • Gary Wolfowicz,
  • Christopher P. Anderson,
  • Andrew L. Yeats,
  • Samuel J. Whiteley,
  • Jens Niklas,
  • Oleg G. Poluektov,
  • F. Joseph Heremans,
  • David D. Awschalom

DOI
https://doi.org/10.1038/s41467-017-01993-4
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 9

Abstract

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Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.