Design of LDO circuit based on curvature compensation reference closed-loop stability

Abstract

In this paper, a low dropout (LDO) circuit based on a curvature compensation benchmark and closed-loop stability is designed. This circuit compensates for the higher order term of VBE in a BJT through the subthreshold characteristic of MOSFET and achieves the effect of curvature compensation. The bandgap reference circuit provides a stable input voltage for the LDO circuit, while the source follower and adaptive bias circuit improve the response speed and closed-loop stability of the LDO circuit. The temperature drift coefficient of the bandgap circuit is 8.11 ppm/°C, the input voltage is 3–5 V, the output voltage is 2.8 V, and the linear adjustment rate is 0.22%.