Study of Metal–Semiconductor–Metal CH₃NH₃PbBr₃ Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Abstract

Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C60 and an Ag electrode on CH3NH3PbBr3 perovskite crystals to complete a photodetector structure, which exhibits a metal−semiconductor−metal (MSM) type structure. First, CH3NH3PbBr3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH3NH3PbBr3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH3NH3PbBr3 perovskite crystals were observed to form a contact with the Ag/C60 as the photodetector, which revealed a responsivity of 24.5 A/W.

Keywords

• ch₃nh₃pbbr₃ perovskite crystals
• inverse temperature crystallization
• large-area crystals
• msm photodetectors