Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys

Abstract

A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments

Keywords

• silicon carbide
• SiC MOSFET
• 4H-SiC
• 6H-SiC
• Crosslight Apsys
• Silvaco Atlas