Tuning the Optical, Electronic and Thermal Characteristics of Si3N4/PVA/PEO Solid State Structures for Electronics Devices

Abstract

The present paper deals with design of Si3N4 doped PVA/PEO new structures to use in different optic, electronic, photonic and electric approaches with distinguished characteristics included few cost, high corrosion resistance, lightweight and good optical, thermal and electronic properties. The Si3N4/PVA/PEO structures were optimized and effectively simulated with a B3LYP / LanL2DZ primer. The structure stability, optical, thermal and electronic properties of Si3N4/PVA/PEO were studied. The obtained results indicated to the PVA/PEO/Si3N4 structures may be used for various optoelectronics devices with low cost and high flexibly.

Keywords

• silicon nitride
• energy gap
• peo
• electronic properties
• devices