Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Christoph Baeumer; Christoph Schmitz; Astrid Marchewka; David N. Mueller; Richard Valenta; Johanna Hackl; Nicolas Raab; Steven P. Rogers; M. Imtiaz Khan; Slavomir Nemsak; Moonsub Shim; Stephan Menzel; Claus Michael Schneider; Rainer Waser; Regina Dittmann

doi:10.1038/ncomms12398

Nature Communications (Aug 2016)

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Christoph Baeumer,
Christoph Schmitz,
Astrid Marchewka,
David N. Mueller,
Richard Valenta,
Johanna Hackl,
Nicolas Raab,
Steven P. Rogers,
M. Imtiaz Khan,
Slavomir Nemsak,
Moonsub Shim,
Stephan Menzel,
Claus Michael Schneider,
Rainer Waser,
Regina Dittmann

Affiliations

Christoph Baeumer: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Christoph Schmitz: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Astrid Marchewka: Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University
David N. Mueller: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Richard Valenta: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Johanna Hackl: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Nicolas Raab: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Steven P. Rogers: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois
M. Imtiaz Khan: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Slavomir Nemsak: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Moonsub Shim: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois
Stephan Menzel: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Claus Michael Schneider: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Rainer Waser: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Regina Dittmann: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT

DOI: https://doi.org/10.1038/ncomms12398
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 7

Abstract

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Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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