Advances in Electrical and Electronic Engineering (Jan 2004)

Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

  • Pavol Pisecny,
  • Lubica Stuchlikova,
  • Ladislav Harmatha,
  • Milan Tapajna,
  • Otto Csabay

Journal volume & issue
Vol. 3, no. 2
pp. 269 – 272

Abstract

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The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects.

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