Sensors (Sep 2024)

Active Region Mode Control for High-Power, Low-Linewidth Broadened Semiconductor Optical Amplifiers for Light Detection and Ranging

  • Hui Tang,
  • Meng Zhang,
  • Lei Liang,
  • Tianyi Zhang,
  • Li Qin,
  • Yue Song,
  • Yuxin Lei,
  • Peng Jia,
  • Yubing Wang,
  • Cheng Qiu,
  • Chuantao Zheng,
  • Xin Li,
  • Yongyi Chen,
  • Dan Li,
  • Yongqiang Ning,
  • Lijun Wang

DOI
https://doi.org/10.3390/s24186083
Journal volume & issue
Vol. 24, no. 18
p. 6083

Abstract

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This paper introduces a semiconductor optical amplifier (SOA) with high power and narrow linewidth broadening achieved through active region mode control. By integrating mode control with broad-spectrum epitaxial material design, the device achieves high gain, high power, and wide band output. At a wavelength of 1550 nm and an ambient temperature of 20 °C, the output power reaches 757 mW when the input power is 25 mW, and the gain is 21.92 dB when the input power is 4 mW. The 3 dB gain bandwidth is 88 nm, and the linewidth expansion of the input laser after amplification through the SOA is only 1.031 times. The device strikes a balance between high gain and high power, offering a new amplifier option for long-range light detection and ranging (LiDAR).

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