High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
Xuewei Zhao,
Guilei Wang,
Hongxiao Lin,
Yong Du,
Xue Luo,
Zhenzhen Kong,
Jiale Su,
Junjie Li,
Wenjuan Xiong,
Yuanhao Miao,
Haiou Li,
Guoping Guo,
Henry H. Radamson
Affiliations
Xuewei Zhao
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
Guilei Wang
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Hongxiao Lin
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Yong Du
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Xue Luo
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Zhenzhen Kong
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Jiale Su
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Junjie Li
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Wenjuan Xiong
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Yuanhao Miao
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Haiou Li
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
Guoping Guo
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
Henry H. Radamson
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.
