Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
Buqing Xu,
Guilei Wang,
Yong Du,
Yuanhao Miao,
Ben Li,
Xuewei Zhao,
Hongxiao Lin,
Jiahan Yu,
Jiale Su,
Yan Dong,
Tianchun Ye,
Henry H. Radamson
Affiliations
Buqing Xu
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Guilei Wang
Beijing Superstring Academy of Memory Technology, Beijing 100176, China
Yong Du
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Yuanhao Miao
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Ben Li
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Xuewei Zhao
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Hongxiao Lin
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Jiahan Yu
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Jiale Su
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Yan Dong
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Tianchun Ye
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Henry H. Radamson
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm−2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.
