Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs
Zhanpeng Yan,
Hongxia Liu,
Menghao Huang,
Shulong Wang,
Shupeng Chen,
Xilong Zhou,
Junjie Huang,
Chang Liu
Affiliations
Zhanpeng Yan
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Hongxia Liu
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Menghao Huang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Shulong Wang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Shupeng Chen
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Xilong Zhou
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Junjie Huang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Chang Liu
Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency fT, maximum oscillation frequency fmax) show significant degradation of approximately 14.1% and 6.8%, respectively. The variation of the small-signal parameters (output conductance (gds), transconductance (gm), reflection coefficient (|Γin|), and capacitance (Cgg)) at different TID levels has been discussed. TID-induced trapped charges in the gate oxide and buried oxide increase the vertical channel field, which leads to more complex degradation of small-signal parameters across a wide frequency range.
