Drift-diffusion models for the simulation of a graphene field effect transistor

Abstract

Abstract A field effect transistor having the active area made of monolayer graphene is simulated by a drift-diffusion model coupled with the Poisson equation. The adopted geometry, already proposed in (Nastasi and Romano in IEEE Trans. Electron. Devices 68:4729–4734, 2021, https://doi.org/10.1109/TED.2021.3096492 ), gives a good current-ON/current-OFF ratio as it is evident in the simulations. In this paper, we compare the numerical simulations of the standard (non-degenerate) drift-diffusion model, that includes the Einstein diffusion coefficient, with the degenerate case.

Keywords

• Graphene FET
• Drift-diffusion model
• Graphene