Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering
Qiang Li,
Qifan Zhang,
Ransheng Chen,
Haoran Zhang,
Mingdi Wang,
Jingping Zhu,
Xiaoliang Wang,
Yuhuai Liu,
Feng Yun
Affiliations
Qiang Li
Key Laboratory for Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China
Qifan Zhang
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Ransheng Chen
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Haoran Zhang
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Mingdi Wang
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Jingping Zhu
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Xiaoliang Wang
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yuhuai Liu
National Centre for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
Feng Yun
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.
