IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Jan 2019)

Error-Resilient Spintronics via the Shannon- Inspired Model of Computation

  • Ameya D. Patil,
  • Sasikanth Manipatruni,
  • Dmitri E. Nikonov,
  • Ian A. Young,
  • Naresh R. Shanbhag

DOI
https://doi.org/10.1109/JXCDC.2019.2909912
Journal volume & issue
Vol. 5, no. 1
pp. 10 – 18

Abstract

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The energy and delay reductions from CMOS scaling have stagnated, motivating the search for a CMOS replacement. Spintronic devices are one of the promising beyond-CMOS alternatives. However, they exhibit high switching error rates of 1% or more when operated at energy and delay comparable to CMOS, rendering them incompatible with the deterministic nature of digital implementations. In this paper, we employ a Shannon-inspired model of computation to enhance the tolerance of all-spin logic (ASL)-based implementations to gate-level switching errors. We develop the logic-level path delay reallocation techniques to shape the output error statistics and propose a novel error compensation scheme to achieve 1000× higher tolerance to device-level switching errors while maintaining the classification accuracy of an ASL-based support vector machine (SVM) classifier.

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