Ferroelectric properties of highly a-oriented polycrystalline Bi2WO6 thin films grown on glass substrates

Yoonho Ahn; Jong Yeog Son

doi:10.1063/1.4965925

AIP Advances (Oct 2016)

Ferroelectric properties of highly a-oriented polycrystalline Bi2WO6 thin films grown on glass substrates

Yoonho Ahn,
Jong Yeog Son

Affiliations

Yoonho Ahn: Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 446-701, South Korea
Jong Yeog Son: Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 446-701, South Korea

DOI: https://doi.org/10.1063/1.4965925
Journal volume & issue: Vol. 6, no. 10
pp. 105008 – 105008-5

Abstract

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Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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