Effects of gamma irradiation on the properties of Ce2S3 thin films

Abstract

Cerium sulphide (Ce2S3) thin films were prepared via successive ionic layer adsorption and reaction (SILAR) scheme. The optical, structural, and electrical investigations of both virgin and gamma-exposure samples were conducted, focussing on the gamma irradiation dose. The objective was to examine the impact of gamma irradiation on the characteristics of the Ce2S3 thin films. An X-ray diffraction (XRD) study of the samples established the orthorhombic phase of the Ce2S3 thin films and revealed that the crystallinity was improved with the gamma dose. The Field emission scanning electron microscope (FESEM) images of the virgin thin film detected a smooth surface with spherical grains with distinct grain boundaries. In contrast, after the gamma exposure, the thin film surface revealed a cluster of small particles. Energy dispersive X-ray (EDX) study inveterate the stoichiometry of the prepared Ce2S3 thin films. The gamma exposure dose caused a deviation in the bandgap, which was related to the quantum confinement effect. Photoluminescence (PL) spectra proved that the emission intensity of the Ce2S3 thin films decreased with increasing gamma dosage, and this phenomenon was attributed to the additional crystallites and a smaller number of structural defects. This simple approach to amend the characteristics of Ce2S3 thin films by gamma exposure could become an attractive option to explore this material for dosimetry and radiation sensing.

Keywords

• Gamma exposure
• SILAR
• Photoluminescence
• Energy band gap
• Impedance spectroscopy