Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Yasuto Hijikata; Ryosuke Asafuji; Ryotaro Konno; Yurie Akasaka; Ryo Shinoda

doi:10.1063/1.4922536

AIP Advances (Jun 2015)

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Yasuto Hijikata,
Ryosuke Asafuji,
Ryotaro Konno,
Yurie Akasaka,
Ryo Shinoda

Affiliations

Yasuto Hijikata: Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
Ryosuke Asafuji: Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
Ryotaro Konno: Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
Yurie Akasaka: Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
Ryo Shinoda: Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan

DOI: https://doi.org/10.1063/1.4922536
Journal volume & issue: Vol. 5, no. 6
pp. 067128 – 067128-7

Abstract

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Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth transitioned to oxide/SiC interface growth. The influence of Si and C emission on the oxidation rate was investigated by real-time measurements of the oxide growth rate. Experimental observations of annealing-inserted oxidation and two-temperature oxidation indicated that the emission suppressed the oxidation rate.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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