Anomalous anisotropic magnetoresistance effects in graphene
Yiwei Liu,
Rong Yang,
Huali Yang,
Duoming Wang,
Qingfeng Zhan,
Guangyu Zhang,
Yali Xie,
Bin Chen,
Run-Wei Li
Affiliations
Yiwei Liu
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
Rong Yang
Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing
100080, People's Republic of China
Huali Yang
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
Duoming Wang
Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing
100080, People's Republic of China
Qingfeng Zhan
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
Guangyu Zhang
Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing
100080, People's Republic of China
Yali Xie
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
Bin Chen
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
Run-Wei Li
Key Laboratory of Magnetic Materials and Devices & Zhejiang
Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute
of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences
(CAS), Ningbo 315201, People's Republic of China
We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of −33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.
