Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors

G. Sharma; L. Razzari; F. H. Su; F. Blanchard; A. Ayesheshim; T. L. Cocker; L. V. Titova; H. C. Bandulet; T. Ozaki; J.-C. Kieffer; R. Morandotti; M. Reid; F. A. Hegmann

doi:10.1109/JPHOT.2010.2050873

IEEE Photonics Journal (Jan 2010)

Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors

G. Sharma,
L. Razzari,
F. H. Su,
F. Blanchard,
A. Ayesheshim,
T. L. Cocker,
L. V. Titova,
H. C. Bandulet,
T. Ozaki,
J.-C. Kieffer,
R. Morandotti,
M. Reid,
F. A. Hegmann

Affiliations

G. Sharma: $^{1}$INRS-EMT, Advanced Laser Light Source, Université du Québec, Varennes, Canada
L. Razzari: $^{2}$Dipartimento di Elettronica, Università di Pavia, Pavia, Italy
F. H. Su: $^{3}$Department of Physics, University of Alberta, Edmonton, Canada
F. Blanchard: $^{4}$Graduate School of Science, Kyoto University, Kyoto, Japan
A. Ayesheshim: Dept. of Phys., Univ. of Alberta, Edmonton, AB, Canada
T. L. Cocker: Dept. of Phys., Univ. of Alberta, Edmonton, AB, Canada
L. V. Titova: Dept. of Phys., Univ. of Alberta, Edmonton, AB, Canada
H. C. Bandulet: Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
T. Ozaki: Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
J.-C. Kieffer: Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
R. Morandotti: Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
M. Reid: $^{5}$Department of Physics, University of Northern British Columbia, Prince George, Canada
F. A. Hegmann: Dept. of Phys., Univ. of Alberta, Edmonton, AB, Canada

DOI: https://doi.org/10.1109/JPHOT.2010.2050873
Journal volume & issue: Vol. 2, no. 4
pp. 578 – 592

Abstract

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Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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