Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm

Abstract

AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a wavelength below 250 nm, have great application potential in the fields of sterilization and disinfection, gas sensing, and other aspects. However, with the decrease of emission wavelength, performance collapse occurs and the external quantum efficiencies (EQE) of sub-250 nm LEDs are usually below 1% for a long time. Low efficiencies are resulted from problem accumulation of all aspects, including n/p-type doping and contacts, carrier confinements and transports, light extraction, etc. To achieve high EQE of sub-250 nm LEDs, problems and solutions need to be discussed. In this paper, the research progress, development bottlenecks, and corresponding solutions of sub-250 nm LEDs are summarized and discussed in detail.

Keywords

• UVC-LED
• AlGaN
• doping
• carrier confinement
• light extraction