Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Shucheng Ge; Jiangping Dai; Na Gao; Shiqiang Lu; Penggang Li; Kai Huang; Bin Liu; Junyong Kang; Rong Zhang; Youdou Zheng

doi:10.1186/s11671-019-3003-1

Nanoscale Research Letters (May 2019)

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Shucheng Ge,
Jiangping Dai,
Na Gao,
Shiqiang Lu,
Penggang Li,
Kai Huang,
Bin Liu,
Junyong Kang,
Rong Zhang,
Youdou Zheng

Affiliations

Shucheng Ge: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Jiangping Dai: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University
Na Gao: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Shiqiang Lu: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Penggang Li: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Kai Huang: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Bin Liu: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University
Junyong Kang: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Rong Zhang: Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University
Youdou Zheng: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University

DOI: https://doi.org/10.1186/s11671-019-3003-1
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 7

Abstract

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Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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