APL Materials (Dec 2014)

Materials News: Interfacial chemistry and atomic arrangement of ZrO2 − La2/3Sr1/3MnO3 pillar-matrix structures

  • Dan Zhou,
  • Wilfried Sigle,
  • Eiji Okunishi,
  • Yi Wang,
  • Marion Kelsch,
  • Hanns-Ulrich Habermeier,
  • Peter A. van Aken

DOI
https://doi.org/10.1063/1.4904819
Journal volume & issue
Vol. 2, no. 12
pp. 127301 – 127301-10

Abstract

Read online

We studied ZrO2 − La2/3Sr1/3MnO3 pillar–matrix thin films which were found to show anomalous magnetic and electron transport properties. With the application of an aberration-corrected transmission electron microscope, interfacial chemistry, and atomic-arrangement of the system, especially of the pillar–matrix interface were revealed at atomic resolution. Minor amounts of Zr were found to occupy Mn positions within the matrix. The Zr concentration reaches a minimum near the pillar–matrix interface accompanied by oxygen vacancies. La and Mn diffusion into the pillar was revealed at atomic resolution and a concomitant change of the Mn valence state was observed.