Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

Abstract

Parasitic capacitances in high frequency have a significant role in examining the inductor-capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka-band satellite receiver oscillator, which considers these parasitic elements, in order to maintain a specific precise frequency where there is no need for a broadband frequency range. By using tuned parasitic elements in differential LC oscillator to resonate the circuit's common mode at twice the oscillation frequency, a better phase noise performance and higher oscillator FOM can be achieved. The developed methodology is employed to design and fabricate an oscillator in 0.25 µm AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors process for 19.25 GHz oscillations.

Keywords

• gallium arsenide
• indium compounds
• iii-v semiconductors
• aluminium compounds
• phase noise
• microwave oscillators
• lc circuits
• satellite communication
• radio receivers
• microwave field effect transistors
• size 0.25 mum
• frequency 19.25 ghz
• algaas-ingaas
• pseudomorphic high-electron-mobility transistors process
• phase noise performance
• circuit common mode resonator
• lc oscillator output signal quality
• ka-band satellite receiver
• ka-band satellite receiver oscillator
• parasitic capacitances
• implicit common-mode resonance
• higher oscillator fom
• twice the oscillation frequency
• differential lc oscillator
• tuned parasitic elements
• broadband frequency range
• specific precise frequency