Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical Methods

Фізика і хімія твердого тіла. 2016;16(3):560-564 DOI 10.15330/pcss.16.3.560-564


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Journal Title: Фізика і хімія твердого тіла

ISSN: 1729-4428 (Print); 2309-8589 (Online)

Publisher: Vasyl Stefanyk Precarpathian National University

LCC Subject Category: Science: Physics

Country of publisher: Ukraine

Language of fulltext: Ukrainian, English

Full-text formats available: PDF



G. A. Pashchenko (Інститут фізики напівпровідників ім. В.Є.Лашкарьова НАН України)

M. J. Kravetsky (Інститут фізики напівпровідників ім. В.Є.Лашкарьова НАН України)

O. V. Fomin (Інститут фізики напівпровідників ім. В.Є.Лашкарьова НАН України)


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Time From Submission to Publication: 12 weeks


Abstract | Full Text

<p class="ArticleAnnotation"><span lang="EN-US">The comparative investigation of two chemical polishing methods as applied to GaAs substrates is carried out. In both cases the equal etchant Br<sub>2</sub>+HBr was used. The comparison of etching rates and of surface morphology is carried out. It is revealed that numerous etching pits arise during chemo-dynamical polishing of GaAs (111) В samples but not arise during non-contact chemo-mechanical polishing of the same samples. Besides, last method allows to raise appreciably etching rate as compared with the method of chemo-dynamical polishing. That is, the same etchant behaves as selective or polishing depending on method of polishing. On the basis of worked out model of substrate surface etching near line defect the simulating of etching pit arising is carried out. The results of simulation are consistent with the idea that there are two competing ways of GaAs etching in the etchant Br<sub>2</sub>+HBr .</span></p> <p class="ArticleAnnotation"><strong><span lang="EN-US">Keywords: </span></strong><span lang="EN-US">substrate<strong>,</strong> chemo-dynamical polishing, chemo-mechanical polishing.</span></p>