AIP Advances (Nov 2015)

Controllable magnetization and resistivity jumps of manganite thin films on BaTiO3 substrate

  • Wengang Wei,
  • Jinjie Chen,
  • Kai Zhang,
  • Yunfang Kou,
  • Kai Du,
  • Yinyan Zhu,
  • Wenbin Wang,
  • Xiaolong Li,
  • Xingmin Zhang,
  • Xingyu Gao,
  • Lei Zhang,
  • Mingliang Tian,
  • Denglu Hou,
  • Lifeng Yin,
  • Jian Shen

DOI
https://doi.org/10.1063/1.4936245
Journal volume & issue
Vol. 5, no. 11
pp. 117135 – 117135-7

Abstract

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Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate. Both upward and downward jumps have been reported at the same temperature point where BTO undergoes a structural transition from monoclinic to rhombohedral. Using La5/8Ca3/8MnO3/BaTiO3 as protype system, we solve the puzzle by showing that the direction of the jumps can be controlled by applying an electric field during post growth cooling which determines the orientation of the c-axis of the BTO substrate at room temperature. This offers a convenient way to control the magnetic and transport behavior of manganites films using electric field.