Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar <inline-formula><math display="inline"><semantics><mrow><mfenced><mrow><mn>11</mn><mover accent="true"><mn>2</mn><mo>¯</mo></mover><mn>2</mn></mrow></mfenced></mrow></semantics></math></inline-formula> InGaN/GaN Multi-Quantum Wells
Mi-Hyang Sheen,
Yong-Hee Lee,
Jongjin Jang,
Jongwoo Baek,
Okhyun Nam,
Cheol-Woong Yang,
Young-Woon Kim
Affiliations
Mi-Hyang Sheen
Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
Yong-Hee Lee
Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
Jongjin Jang
Department of Nano-Optical Engineering, LED Technology Center, Tech University of Korea, Siheung-si 15073, Republic of Korea
Jongwoo Baek
Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
Okhyun Nam
Department of Nano-Optical Engineering, LED Technology Center, Tech University of Korea, Siheung-si 15073, Republic of Korea
Cheol-Woong Yang
School of Advanced Materials Science & Engineering, SungKyunKwan University, Suwon 16419, Republic of Korea
Young-Woon Kim
Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to 112¯2 and 011¯1, were formed in the embedded multi-quantum wells (MQWs). The structural and luminescence characteristics of the two facets were investigated using transmission electron microscopy equipped with cathodoluminescence. Those well-defined quantum wells, parallel and slanted to the growth plane, showed distinct differences in indium incorporation from both the X-ray yield and the contrast difference in annular darkfield images. Quantitative measurements of concentration in 011¯1 MQWs show an approximately 4 at% higher indium incorporation compared to the corresponding 112¯2 when the MQWs were formed under the same growth condition.
