Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

Abstract

The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper, a novel low-cost discrete SMD component gate driver embedded in a SiC MOSFET power module is introduced. A newly integrated packaging structure has been introduced and proved to be efficient in reducing package-related turn-on loss and turn-off parasitic ringing. However, the gate propagation delay and optocoupler on-chip weak output signal in such a structure become limitations for further pushing the operating frequency and the output current level for high-efficiency power conversion. The electrical characterization of low-temperature co-fired ceramic (LTCC) gate drivers is covered. Furthermore, a 1200 V/120A SiC MOSFET phase-leg power module utilizing high-temperature packaging technologies has been developed. The static characteristics, switching performance, and thermal behavior of the fabricated power module are fully evaluated under operating temperature variations of up to 250 °C.

Keywords

• High-temperature (HT) gate driver
• Power module
• Power device packaging
• High-temperature applications
• Silicon carbide MOSFET
• BJT