Nature Communications (Jun 2020)

Nonvolatile ferroelectric field-effect transistors

  • Xiaojie Chai,
  • Jun Jiang,
  • Qinghua Zhang,
  • Xu Hou,
  • Fanqi Meng,
  • Jie Wang,
  • Lin Gu,
  • David Wei Zhang,
  • An Quan Jiang

DOI
https://doi.org/10.1038/s41467-020-16623-9
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 9

Abstract

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There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.