The development of laser-produced plasma EUV light source
De-Kun Yang,
Du Wang,
Qiu-Shi Huang,
Yi Song,
Jian Wu,
Wen-Xue Li,
Zhan-Shan Wang,
Xia-Hui Tang,
Hong-Xing Xu,
Sheng Liu,
Cheng-Qun Gui
Affiliations
De-Kun Yang
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
Du Wang
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
Qiu-Shi Huang
Key Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
Yi Song
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China; Corresponding author.
Jian Wu
State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
Wen-Xue Li
State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
Zhan-Shan Wang
Key Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
Xia-Hui Tang
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Hong-Xing Xu
School of Physics and Technology, Wuhan University, Wuhan 430072, China; Corresponding author.
Sheng Liu
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China; Corresponding author.
Cheng-Qun Gui
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask. Historically, both theoretical studies and experiments have clearly indicated that the CO2 laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power. Currently, ASML's NXE:3400B EUV scanner configuring CO2 LPP source system has been installed and operated at chipmaker customers. Meanwhile, other research teams have made different progresses in the development of LPP EUV sources. However, in their technologies, some critical areas need to be further improved to meet the requirements of 5 nm node and below. Critically needed improvements include higher laser power, stable droplet generation system and longer collector lifetime. In this paper, we describe the performance characteristics of the laser system, droplet generator and mirror collector for different EUV sources, and also the new development results.
