Hybrid molecular beam epitaxy of germanium-based oxides

Fengdeng Liu; Tristan K. Truttmann; Dooyong Lee; Bethany E. Matthews; Iflah Laraib; Anderson Janotti; Steven R. Spurgeon; Scott A. Chambers; Bharat Jalan

doi:10.1038/s43246-022-00290-y

Communications Materials (Oct 2022)

Hybrid molecular beam epitaxy of germanium-based oxides

Fengdeng Liu,
Tristan K. Truttmann,
Dooyong Lee,
Bethany E. Matthews,
Iflah Laraib,
Anderson Janotti,
Steven R. Spurgeon,
Scott A. Chambers,
Bharat Jalan

Affiliations

Fengdeng Liu: Department of Chemical Engineering and Materials Science, University of Minnesota
Tristan K. Truttmann: Department of Chemical Engineering and Materials Science, University of Minnesota
Dooyong Lee: Department of Chemical Engineering and Materials Science, University of Minnesota
Bethany E. Matthews: Energy and Environment Directorate, Pacific Northwest National Laboratory
Iflah Laraib: Department of Materials Science and Engineering, University of Delaware
Anderson Janotti: Department of Materials Science and Engineering, University of Delaware
Steven R. Spurgeon: Energy and Environment Directorate, Pacific Northwest National Laboratory
Scott A. Chambers: Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory
Bharat Jalan: Department of Chemical Engineering and Materials Science, University of Minnesota

DOI: https://doi.org/10.1038/s43246-022-00290-y
Journal volume & issue: Vol. 3, no. 1
pp. 1 – 8

Abstract

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Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

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