Enhanced Light-Induced Transverse Thermoelectric Effect in Tilted BiCuSeO Film via the Ultra-thin AuNPs Layer

Weiyuan Yu; Guoying Yan; Yuli Xue; Yuejiao Zhang; Jianglong Wang; Guangsheng Fu; Shufang Wang

doi:10.1186/s11671-019-3190-9

Nanoscale Research Letters (Dec 2019)

Enhanced Light-Induced Transverse Thermoelectric Effect in Tilted BiCuSeO Film via the Ultra-thin AuNPs Layer

Weiyuan Yu,
Guoying Yan,
Yuli Xue,
Yuejiao Zhang,
Jianglong Wang,
Guangsheng Fu,
Shufang Wang

Affiliations

Weiyuan Yu: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Guoying Yan: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Yuli Xue: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Yuejiao Zhang: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Jianglong Wang: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Guangsheng Fu: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University
Shufang Wang: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University

DOI: https://doi.org/10.1186/s11671-019-3190-9
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 6

Abstract

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Abstract Significant enhancement of light-induced transverse thermoelectric (LITT) effect in tilted BiCuSeO film has been achieved via introduction of an ultra-thin layer of gold nanoparticles (AuNPs) with the thickness of a few nanometers. In both cases of pulsed and continuous light irradiation, about two times increment in the LITT voltage sensitivity is observed for the BiCuSeO film coated with 4-nm-thick AuNPs layer. This can be ascribed to the increased photo-thermal conversion efficiency in the LITT effect owing to the efficient usage of the incident light of AuNPs layer. Thicker AuNPs layer will suppress the voltage sensitivity increment due to the electrical connectivity effect. This work provides an effective strategy for optimizing the performance of thermal-type optical detectors based on the LITT effect.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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