Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

Sukrith Dev; Yinan Wang; Kyounghwan Kim; Marziyeh Zamiri; Clark Kadlec; Michael Goldflam; Samuel Hawkins; Eric Shaner; Jin Kim; Sanjay Krishna; Monica Allen; Jeffery Allen; Emanuel Tutuc; Daniel Wasserman

doi:10.1038/s41467-019-09602-2

Nature Communications (Apr 2019)

Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

Sukrith Dev,
Yinan Wang,
Kyounghwan Kim,
Marziyeh Zamiri,
Clark Kadlec,
Michael Goldflam,
Samuel Hawkins,
Eric Shaner,
Jin Kim,
Sanjay Krishna,
Monica Allen,
Jeffery Allen,
Emanuel Tutuc,
Daniel Wasserman

Affiliations

Sukrith Dev: Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin
Yinan Wang: Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin
Kyounghwan Kim: Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin
Marziyeh Zamiri: Materials Science and Engineering, University of Wisconsin
Clark Kadlec: Sandia National Laboratories
Michael Goldflam: Sandia National Laboratories
Samuel Hawkins: Sandia National Laboratories
Eric Shaner: Sandia National Laboratories
Jin Kim: Sandia National Laboratories
Sanjay Krishna: Electrical and Computer Engineering, Ohio State University
Monica Allen: Air Force Research Laboratory, Munitions Directorate, Eglin Air Force Base
Jeffery Allen: Air Force Research Laboratory, Munitions Directorate, Eglin Air Force Base
Emanuel Tutuc: Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin
Daniel Wasserman: Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin

DOI: https://doi.org/10.1038/s41467-019-09602-2
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 7

Abstract

Read online

A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pixel.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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