New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

Abstract

A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency $(\sim 500~\mathrm {MHz})$ , zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using $180 \mathrm {~nm}$ technology parameters. The layout occupies $1305 \mu \mathrm {m}^{2}$ area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND & OR and NOT circuit configurations have been designed using proposed MRE.

Keywords

• Memristor
• emulator
• MOSFET
• DTMOS
• memductance
• hysteresis loop