The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films

H. R. Fu; L. Ma; N. Tian; C. Y. You; K. Wang

doi:10.1063/1.5006335

AIP Advances (May 2018)

The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films

H. R. Fu,
L. Ma,
N. Tian,
C. Y. You,
K. Wang

Affiliations

H. R. Fu: School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, P. R. China
L. Ma: School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, P. R. China
N. Tian: School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, P. R. China
C. Y. You: School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, P. R. China
K. Wang: College of Information Science and Engineering, Huaqiao University, Xiamen 361021, P. R. China

DOI: https://doi.org/10.1063/1.5006335
Journal volume & issue: Vol. 8, no. 5
pp. 055804 – 055804-5

Abstract

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A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(tCMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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