Graphene–ZnO:N barristor on a polyethylene naphthalate substrate
Hyeon Jun Hwang,
Sunwoo Heo,
Won Beom Yoo,
Byoung Hun Lee
Affiliations
Hyeon Jun Hwang
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Sunwoo Heo
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Won Beom Yoo
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Byoung Hun Lee
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process with a maximum process temperature below 200 °C. An on/off ratio of over 104 is obtained with a 0.1 A/cm2 drive current density at Vd = 0.5 V. The transmittance, degraded by the device stack, was 2.5–3% in the visible wavelength range, and a high on/off ratio was maintained after 600 bending cycles at a 0.6% strain (bending radius = 10 mm).
