Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

Jingtao Liu; Shiping Luo; Xiaohui Liu; Ying Wang; Chunsheng Wang; Shufang Wang; Guangsheng Fu; Yuriy I. Mazur; Morgan E. Ware; Gregory J. Salamo; Baolai Liang

doi:10.3390/cryst12030319

Crystals (Feb 2022)

Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

Jingtao Liu,
Shiping Luo,
Xiaohui Liu,
Ying Wang,
Chunsheng Wang,
Shufang Wang,
Guangsheng Fu,
Yuriy I. Mazur,
Morgan E. Ware,
Gregory J. Salamo,
Baolai Liang

Affiliations

Jingtao Liu: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Shiping Luo: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Xiaohui Liu: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Ying Wang: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Chunsheng Wang: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Shufang Wang: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Guangsheng Fu: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China
Yuriy I. Mazur: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Morgan E. Ware: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Gregory J. Salamo: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Baolai Liang: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding 071002, China

DOI: https://doi.org/10.3390/cryst12030319
Journal volume & issue: Vol. 12, no. 3
p. 319

Abstract

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Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface quantum dots (SQDs), coupled to an injection layer of either one layer of In0.4Ga0.6As buried QDs (BQDs) or an In0.15Ga0.85As quantum well (QW), both through a 10 nm GaAs thin spacer. Spectroscopic measurements show that carrier capture and emission efficiency for SQDs in the BQD injection structure is better than that of the QW injection, due to strong physical and electrical coupling between the two QD layers. In the case of QW injection, although most carriers can be collected into the QW, they then tunnel into the wetting layer of the SQDs and are subsequently lost to surface states via non-radiative recombination. Therefore, the QW as an injection source for SQDs may not work as well as the BQDs for stacking coupled SQDs structures.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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