Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering
Ming-Hung Hsu,
Sheng-Po Chang,
Shoou-Jinn Chang,
Wei-Ting Wu,
Jyun-Yi Li
Affiliations
Ming-Hung Hsu
Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Sheng-Po Chang
Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Shoou-Jinn Chang
Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Wei-Ting Wu
Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Jyun-Yi Li
Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.
