Dielectric Relaxation Behavior of BTO/LSMO Heterojunction

Guoqiang Song; Yuanyuan Zhang; Sheng Li; Jing Yang; Wei Bai; Xiaodong Tang

doi:10.3390/nano11051109

Nanomaterials (Apr 2021)

Dielectric Relaxation Behavior of BTO/LSMO Heterojunction

Guoqiang Song,
Yuanyuan Zhang,
Sheng Li,
Jing Yang,
Wei Bai,
Xiaodong Tang

Affiliations

Guoqiang Song: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
Yuanyuan Zhang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
Sheng Li: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
Jing Yang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
Wei Bai: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
Xiaodong Tang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China

DOI: https://doi.org/10.3390/nano11051109
Journal volume & issue: Vol. 11, no. 5
p. 1109

Abstract

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The BaTiO3 (BTO)/La0.7Sr0.3MnO3 (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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