InGaN-LD-Pumped <inline-formula> <tex-math notation="TeX">${\rm Pr}^{3+}$</tex-math></inline-formula>: <inline-formula> <tex-math notation="TeX">${\rm LiYF}_{4}$</tex-math></inline-formula> Continuous-Wave Laser at 915 nm

Abstract

We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr3+: LiYF4 crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are estimated to be about 0.45%, and the M2 beam quality factors measured in x and y dimensions are about 1.07 and 1.04, respectively.

Keywords

• Solid state lasers
• Diode-pumped lasers
• infrared lasers