Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Minjong Lee; Tae Wook Kim; Chang Yong Park; Kimoon Lee; Takashi Taniguchi; Kenji Watanabe; Min-gu Kim; Do Kyung Hwang; Young Tack Lee

doi:10.1007/s40820-022-01001-5

Nano-Micro Letters (Dec 2022)

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Minjong Lee,
Tae Wook Kim,
Chang Yong Park,
Kimoon Lee,
Takashi Taniguchi,
Kenji Watanabe,
Min-gu Kim,
Do Kyung Hwang,
Young Tack Lee

Affiliations

Minjong Lee: Department of Electrical and Computer Engineering, Inha University
Tae Wook Kim: Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST)
Chang Yong Park: Department of Electrical and Computer Engineering, Inha University
Kimoon Lee: Department of Physics, Kunsan National University
Takashi Taniguchi: Advanced Materials Laboratory, National Institute for Materials Science
Kenji Watanabe: Advanced Materials Laboratory, National Institute for Materials Science
Min-gu Kim: Department of Electrical and Computer Engineering, Inha University
Do Kyung Hwang: Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST)
Young Tack Lee: Department of Electrical and Computer Engineering, Inha University

DOI: https://doi.org/10.1007/s40820-022-01001-5
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 11

Abstract

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Highlights Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed. Non-classical transfer characteristics (humped curve) in FET operation and negative differential transconductances were observed. Gr-bridge heterostructure device with PdSe2 (narrow bandgap) allows multi-value logic operation while WSe2 (wide bandgap) enables frequency tripler circuit operation.

Published in Nano-Micro Letters

ISSN: 2311-6706 (Print); 2150-5551 (Online)
Publisher: SpringerOpen
Country of publisher: Germany
LCC subjects: Technology
Website: http://www.springer.com/40820

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