Halogenated Thermally Activated Delayed Fluorescence Materials for Efficient Scintillation
Xiao Wang,
Guowei Niu,
Zixing Zhou,
Zhicheng Song,
Ke Qin,
Xiaokang Yao,
Zhijian Yang,
Xiaoze Wang,
He Wang,
Zhuang Liu,
Chengzhu Yin,
Huili Ma,
Kang Shen,
Huifang Shi,
Jun Yin,
Qiushui Chen,
Zhongfu An,
Wei Huang
Affiliations
Xiao Wang
The Institute of Flexible Electronics (IFE, Future Technologies),
Xiamen University, Xiamen 361005, China.
Guowei Niu
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Zixing Zhou
The Institute of Flexible Electronics (IFE, Future Technologies),
Xiamen University, Xiamen 361005, China.
Zhicheng Song
The Institute of Flexible Electronics (IFE, Future Technologies),
Xiamen University, Xiamen 361005, China.
Ke Qin
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Xiaokang Yao
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Zhijian Yang
MOE Key Laboratory for Analytical Science of Food Safety and Biology, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry,
Fuzhou University, Fuzhou 350108, China.
Xiaoze Wang
MOE Key Laboratory for Analytical Science of Food Safety and Biology, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry,
Fuzhou University, Fuzhou 350108, China.
He Wang
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Zhuang Liu
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Chengzhu Yin
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Huili Ma
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Kang Shen
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Huifang Shi
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM),
Nanjing Tech University, Nanjing 211816, China.
Jun Yin
Department of Applied Physics,
The Hong Kong Polytechnic University, Kowloon 999077 Hong Kong, China.
Qiushui Chen
MOE Key Laboratory for Analytical Science of Food Safety and Biology, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry,
Fuzhou University, Fuzhou 350108, China.
Zhongfu An
The Institute of Flexible Electronics (IFE, Future Technologies),
Xiamen University, Xiamen 361005, China.
Wei Huang
The Institute of Flexible Electronics (IFE, Future Technologies),
Xiamen University, Xiamen 361005, China.
Organic scintillators, materials with the ability to exhibit luminescence when exposed to X-rays, have aroused increasing interest in recent years. However, the enhancement of radioluminescence and improving X-ray absorption of organic scintillators lie in the inherent dilemma, due to the waste of triplet excitons and weak X-ray absorption during scintillation. Here, we employ halogenated thermally activated delayed fluorescence materials to improve the triplet exciton utilization and X-ray absorption simultaneously, generating efficient scintillation with a low detection limit, which is one order of magnitude lower than the dosage for X-ray medical diagnostics. Through experimental study and theoretical calculation, we reveal the positive role of X-ray absorption, quantum yields of prompt fluorescence, and intersystem crossing in promoting the radioluminescence intensity. This finding offers an opportunity to design diverse types of organic scintillators and expands the applications of thermally activated delayed fluorescence.
