Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties

Abstract

To enhance the overall performance of perovskite solar cells, the quality of the electron transport layer (ETL) held significant importance. Zinc oxide (ZnO) emerged as highly promising due to its exceptional optical and electrical characteristics. This study included the incorporation of lanthanum (La III) into the ZnO lattice to improve its optoelectronic properties. All the produced thin films were crystallized at low annealing temperatures. Through careful analysis, it was observed that the inclusion of doping with 4% La (III) resulted in increased crystallinity, leading to low surface roughness. Additionally, this doping strategy facilitated enhanced mobility of charge carriers and conductivity.

Keywords

• rare earth element
• thin films
• elemental doping
• electron transport layer